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Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (1x 32GB) DDR3 1866 MT/s 240-pin LRDIMM RAM module from Hynix
2xM470L2923BN0-CB3 Capacity 2GB (2x 1GB) Brand Samsung Speed DDR-333 - 333MT/s - PC2700 Voltage 2
5V Technology DDR3 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM CAS Latency CL11 Pieces in Kit 1 Compatibility
2xCT8G4WFD8266 Capacity 16GB (2x 8GB) Brand Crucial Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1
CT2K8G3S186DM Capacity 16GB (2x 8GB) Brand Crucial Speed DDR3L-1866 - 1866MT/s - PC3L-14900 Voltage 1
Samsung 512MB (2x 256MB) CL2.5 DDR-266 PC2100 2.5V SR x8 184-pin UDIMM RAM Kit System Type_Workstation Dramatically improve performance and handleProduct Overview This 512MB (2x 256MB) DDR 266 MT s Single rank, x8 configuration RAM kit from Samsung is for use in DDR compatible systems and operates at 266 MT s with an overall transfer rate of PC2100. This RAM kit also operates at a standard voltage of 2. 5V with a CAS Latency of CL2. 5, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical
